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Synthesis of Thin Zeolite Film of Silicalite-1 on Single Crystal Silicon Wafers Gao Jincheng, Liu Jing, Yang Meia, Tang Zhenana,
Zou Longjiangb, Liu Yihui Abstract The desired silicon sources were introduced on the single
crystal silicon wafers (100) surface by the low temperature chemical vapor deposition
(LTCVD). The Silicalite-1 zeolite crystals were obtained after the silicon wafers were
treated with the vapor phase transport (VPT) method. To obtain the thin zeolite films with
the secondary growth method, the silicon wafers with the zeolite crystal seeds were
vertically put into the zeolite synthesis previous solution. After the direct in-situ
crystallization, the continuous and density Silicalite-1 thin zeolite films were formed on
the silicon wafers surface and the single crystal silicon wafers were not etched. 单晶硅片上 Silicalite-1沸石薄膜的合成高金成 刘 靖 杨 梅a 唐祯安a 邹龙江b 刘毅慧(大连理工大学精细化工国家重点实验室 大连 116012) (a大连理工大学传感技术研究所 b大连理工大学材料测试分析中心 大连 116023) 摘要 利用低温化学气相沉积法,在经过热氧化处理的单晶硅片(100)上引入硅源;再利用气相转移法,将硅片上的硅源晶化为Silicalite-1沸石晶体;最后,利用二次生长法与直接原位晶化法相结合,将含有沸石晶种的硅片放入沸石合成前驱液中,在单晶硅片上合成出了连续致密的薄Silicalite-1沸石膜,单晶硅片没有被腐蚀。关键词 硅片 Silicalite-1 沸石 沸石薄膜 气体传感器 高金成 男,27岁,硕士,助理工程师,从事沸石催化剂的合成与沸石气敏薄膜材料的研究。 E-mail:kincheng@sohu.com2003-07-02-收稿,2003-10-19接受 |