Synthesis of Thin Zeolite Film of Silicalite-1 on Single Crystal Silicon Wafers Gao Jincheng, Liu Jing, Yang Meia, Tang Zhenana, Zou Longjiangb, Liu Yihui (State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116012 a Institute of Sensor Technology, Dalian University of Technology b Center of Material Testing and Analysis, Dalian University of Technology, Dalian 116023) Abstract The desired silicon sources were introduced on the single crystal silicon wafers (100) surface by the low temperature chemical vapor deposition (LTCVD). The Silicalite-1 zeolite crystals were obtained after the silicon wafers were treated with the vapor phase transport (VPT) method. To obtain the thin zeolite films with the secondary growth method, the silicon wafers with the zeolite crystal seeds were vertically put into the zeolite synthesis previous solution. After the direct in-situ crystallization, the continuous and density Silicalite-1 thin zeolite films were formed on the silicon wafers surface and the single crystal silicon wafers were not etched. Key words Silicon wafer, Silicalite-1, Zeolite, Thin zeolite film, Gas sensor 单晶硅片上 Silicalite-1 沸石薄膜的合成 高金成 刘 靖 杨 梅 a 唐祯安 a 邹龙江 b 刘毅慧 (大连理工大学精细化工国家重点实验室 大连 116012) (a大连理工大学传感技术研究所 b大连理工大学材料测试分析中心 大连 116023) 摘要 利用低温化学气相沉积法，在经过热氧化处理的单晶硅片(100)上引入硅源；再利用气相转移法，将硅片上的硅源晶化为 Silicalite-1 沸石晶体；最后，利用二次生长法与直接原位晶化法相结合，将含有沸石晶种的硅片放入沸石合成前驱液中，在单晶硅片上合成出了连续致密的薄 Silicalite-1 沸石膜，单晶硅片没有被腐蚀。 关键词 硅片 Silicalite-1 沸石 沸石薄膜 气体传感器 高金成 男，27 岁，硕士，助理工程师，从事沸石催化剂的合成与沸石气敏薄膜材料的研究。 E-mail:kincheng@sohu.com 2003-07-02-收稿，2003-10-19接受 (PDF全文下载c04056)